| PART |
Description |
Maker |
| NX6342EP |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
1 310nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| NX8369TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs
|
| NX6311EH NX6311EH-AZ |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION
|
California Eastern Labs
|
| NX6311EH-AZ |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION 1 310纳米AlGaInAs多量子阱激光器的激光二极管 Gb / s光纤通道应用
|
California Eastern Laboratories, Inc.
|
| NX6351GP33-AZ NX6351GP29-AZ |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
California Eastern Labs
|
| ML720AA36S |
1310 nm, LASER DIODE
|
|
| NX6301SH NX6301SI NX6301SJ NX6301SK NX6301GK NX630 |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications.
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
NEC
CEL[California Eastern Labs]
|
| NX5302EJ |
1310 nm InGaAsP MQW FP laser diode for fiber optic communications.
|
NEC
|
| C-13-010-PK-SLC2I C-13-010-PK-SLCMI C-13-010-PK-SS |
10Gbps 1310 nm MQW-FP Laser Diode Pigtailed Module-Differential TOSA
|
Source Photonics, Inc.
|
| C-13-DFB10-TK-SSCMI-01 C-13-DFB10-TK-SLCMI-01 |
10Gbps 1310 nm MQW-DFB Laser Diode Module-Differential TOSA
|
Source Photonics, Inc.
|
